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| Abstract |
低温基板への真空蒸着装置によって、ミクロに乱れた薄膜の輸送特性を、その場測定できる。これを用いて測定した、SiO、Ge、Sb下地膜上の低温蒸着非晶質ビスマス（Bi）薄膜の膜厚変化による超伝導体-絶縁体転移の結果について報告する。
An evaporator-cryostat composite forquench-condensed (q-c) films enables us to measure... in situ the transport properties of microscopically disordered films at low temperatures, in the vacuum environment where a thin film is prepared. We report on the results of the thickness-tuned superconductor-insulator transition of q-c Bi films on insulating SiO, Ge, and Sb underlayers, which have been obtained by this equipment.show more
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teion06_p003