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This study presents a compact on-chip THz source achieved by monolithically integrating InGaAs/SiC UTC-PDs with a planar antenna array. The high thermal conductivity of the SiC substrate enhances the ...saturation photocurrent, enabling stable high-power operation. A microstrip Y-branch structure combines the output power of two UTC-PDs with minimal insertion loss, while the planar antenna array improves beam directivity. The device achieves a 3 dB bandwidth of 25 GHz centred around 290 GHz, with a half-power beamwidth of 60° and an 8 dB side-lobe level. Wireless communication experiments at 290 GHz demonstrate bit error rates below the 7 % HD-FEC thresholds at data rates of 10Gbit/s. These results highlight the device's potential for next-generation high-speed wireless communication systems.続きを見る
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Mendeley出力
