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We propose a new mechanism of crystallization of amorphous alloy which is mediated by additional solute atoms produced by electronic excitation. For a freestanding Pd-19at%Si amorphous alloy film, ele...ctron irradiation causes subtle structural change. By contrast, extensive crystallization of Pd-19at%Si amorphous alloy sandwiched by amorphous (a-) SiO_x films, i.e., a-SiO_x/a-Pd-Si/a-_SiOx, occurred by 75 keV and 200 keV electron irradiation. This crystallization was induced by irradiation not only at room temperature but also even at 90 K. It should be emphasized that the crystallization can be realized by 75 keV irradiation at 90 K via the electronic excitation; where both knock-on damage and a possible thermal crystallization can be excluded. A resultant product of the crystallization after electronic excitation (i.e., electron irradiation), hexagonal Pd_2Si, differs from that of thermal annealing (orthorhombic Pd_3Si). Evidence for decomposition of a-SiO_x by electronic excitation contributes essentially to the crystallization of the a-Pd-Si in the co mposite film has been obtained in this study. Supply of dissociated Si to the a-Pd-Si layer may cause instability of the amorphous phase, which serves as the trigger for the remarkable structural change; i.e., additional solute atom mediated crystallization.続きを見る
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Mendeley出力
