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This paper reports on the integration of power cycling sensors into a PIN diode chip and the experimental verification of the correlation between the change in sensor current and the increase in packa...ge thermal resistance through power cycling tests. The sensor device consists of a Schottky barrier MISFET and can be integrated into a power device. Power cycling degradation is detected by a decrease in the drain current of the SB-MISFET, as repetitive mechanical stress increases the interface state density in the MIS gate. In a previous study, the sensor devices demonstrated the basic operation of a decrease in drain current due to repetitive mechanical bending stress. The thermomechanical stress induced by power cycling tests is mainly a biaxial stress, whereas bending stress has a different geometry, with uniaxial and shear stress components. Therefore, a power cycling test is needed to generate thermomechanical stress and evaluate the actual sensitivity. In this study, the increase in package thermal resistance and the decrease in sensor current with an increasing number of stress cycles in the power cycling test were observed, demonstrating the operation of the sensor due to repetitive thermal stress.続きを見る
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