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To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer... deposition (ALD) high-quality aluminum oxide (Al_2O_3) film for passivation on the whole surface of the SiNW arrays. The minority carrier lifetime of the Al_2O_3-depositedSiNW arrays with bulk silicon substrate was improved to 27 μs at the optimum annealing condition. To remove the effect of bulk silicon, the effective diffusion length of minority carriers in the SiNW array was estimated by simple equations and a device simulator. As a result, it was revealed that the effective diffusion length in the SiNW arrays increased from 3.25 to 13.5 μm by depositing Al_2O_3 and post-annealing at 400°C. This improvement of the diffusion length is very important for application to solar cells, and Al_2O_3 deposited by ALD is a promising passivation material for a structure with high aspect ratio such as SiNW arrays.続きを見る
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Mendeley出力
