| 作成者 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| 本文言語 |
|
| 出版者 |
|
| 発行日 |
|
| 収録物名 |
|
| 巻 |
|
| 号 |
|
| 開始ページ |
|
| 出版タイプ |
|
| アクセス権 |
|
| 関連DOI |
|
| 関連HDL |
|
| 概要 |
We performed a thermodynamic analysis of GaN metalorganic vapor phase epitaxy considering the (0001) and (0001^^¯) surface states. Surface reconstruction, which depends on growth conditions such as te...mperature and partial pressure, affects growth processes. To discuss the effects of surface states on growth processes, we investigated the driving force of precursor deposition to form the surface phase defined stoichiometrically. In both N2 and H2 carrier gas cases, we showed surface phase diagrams, calculated driving forces, and discussed the difference in growth orientation.続きを見る
|
Mendeley出力
