| 作成者 |
|
|
|
|
|
|
|
|
|
| 本文言語 |
|
| 出版者 |
|
| 発行日 |
|
| 収録物名 |
|
| 巻 |
|
| 開始ページ |
|
| アクセス権 |
|
| 権利関係 |
|
|
|
| 関連DOI |
|
| 関連URI |
|
| 概要 |
Fully-depleted thin-film transistors (TFTs) for high-speed and low-power operation are desired to realize next-generation electronics such as system-in-displays and 3-dimensional large scale integrate...d circuits. For this purpose, high-carrier mobility semiconductor thin-films (≤20 nm) should be fabricated on insulators with a low-temperature process. To achieve this, an advanced solid-phase crystallization technique (≤500 °C) of Sn-doped Ge films (Sn concentration: 2%) on insulating substrates is developed, where the interfaces between Ge films and substrates are modulated by a-Si under-layers and the surfaces of Ge films are passivated with a-Si capping layers. Analysis of the growth characteristics reveals that the growth rate becomes high with keeping low nucleation density by adding a-Si capping layers. As a result, the crystal grain sizes of grown films for samples with a-Si capping layers become ∼3 μm, which are about twice as large as those (1−2 μm) for samples without a-Si capping. These phenomena are attributed to suppression of surface segregation of Sn atoms and impurity introduction into the Ge layers. Thanks to the a-Si capping effects, carrier mobility becomes as high as ∼100 cm^2/Vs for the Ge film thickness of 20 nm, whose carrier mobility cannot be measured without a-Si capping. Moreover, fabrication of metal source/drain TFTs is performed using a low-temperature process (≤400 °C), and a field-effect mobility of 35 cm^2/Vs is achieved. This technique will be useful for realization of high-speed fully-depleted TFTs for next-generation electronics.続きを見る
|
Mendeley出力
