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Integration of Ge on the Si platforms is essential for the development of next generation large-scale integrated circuits. The Ge-on-insulator (GOI) structure is suited for the realization of high-mob...ility transistors channels and as epitaxial templates for optoelectronic and spintronic materials. In this work, the fabrication of thin (~50 nm) (100) GOI by the rapid melting growth process has been investigated. Growth with unstable crystal orientation has been observed in wide (≥1 μm) GOI strips. However, orientation stabilized growth was achieved in narrow strips (~0.5 μm). Further stabilization of growth orientation was observed in mesh patterned growth with GOI width of 1 μm. Epitaxial growth of Ge was performed on the above structures and the formation of uniform epitaxial layer was demonstrated.続きを見る
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Mendeley出力
paper1(18-2)