<学術雑誌論文>
Doped organic light emitting diodes having a 650-nm-thick hole transport layer

作成者
本文言語
出版者
発行日
収録物名
開始ページ
終了ページ
出版タイプ
アクセス権
権利関係
関連DOI
関連DOI
関連URI
関連URI
関連HDL
関連情報
概要 We have succeeded in fabricating a thick-film organic light emitting diode having a doped hole transport layer (DHTL). The basic cell structure is anode DHTL/emitter layer/cathode. The DHTL is compose...d of a hole transporting polycarbonate polymer (PC-TPB-DEG) andtris(4-bromophenyl) aminium hexachloroantimonate (TBAHA) as a dopant. As an emitter, we used tris(8-hydroxyquinoline) aluminum (Alq). With a 650-nm-thick DHTL, the device showedconsiderable reduction in cell resistance compared with an anode/nondoped HTL/Alq/cathode device with the same HTL thickness. Although the electroluminescent quantum efficiency FL was rather low in the doped device, we should be able to increase it by interposing a thin tetraphenylbendidine (TPB) layer between the DHTL and the emitter layer while keeping the driving voltage low. The anode/DHTL (650 nm)/TPB(50 nm)/Alq(50 nm)/cathode showed luminance of more than 4004 cd/m2 at 10.0 V and 220 mA/cm2.続きを見る

本文ファイル

pdf 85 pdf 96.4 KB 578  

詳細

レコードID
査読有無
主題
ISSN
NCID
タイプ
登録日 2011.04.20
更新日 2024.01.10