Fundamentals of modern VLSI devices

＜図書＞
Fundamentals of modern VLSI devices

責任表示	Yuan Taur, Tak H. Ning
データ種別	図書
版	2nd ed
出版情報	Cambridge, UK ; New York : Cambridge University Press , 2009
本文言語	英語
大きさ	xxiii, 656 p. : ill. ; 26 cm
概要	Taur (Electrical and Computer Engineering, University of California) and Ning (Fellow, IBM Thomas J. Watson Research Center) have updated this edition of their standard microelectronics text to reflec... the past decade's advances in VLSI devices. Readers are introduced to the basic properties and designs of VLSI devices, as well as factors that affect their performance. The text highlights the interdependencies and tradeoffs between important device parameters, and provides an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. All chapters discuss recent developments in the field (such as MOSFET scale length theory, high-field transport, and SiGe-base bipolar devices), and new chapters deal with memory and silicon-on-insulator devices. The included equations and parameters are checked continuously against the reality of silicon data, making this text useful both for practical transistor design and for classroom use. Annotation ©2009 Book News, Inc., Portland, OR (booknews.com) 続きを見る

状態	巻次	所蔵場所	請求記号	刷年	文庫名称	資料番号	コメント	予約・取寄	複写申込	自動書庫
	: hbk	理系図2F 開架	549.7/Ta 96	2009		130012018802173		リコール			リコール

一般注記	Includes bibliographical references (p. [623]-643) and index
著者標目	Taur, Yuan, 1946- Ning, Tak H., 1943-
件　名	LCSH:Metal oxide semiconductors, Complementary LCSH:Bipolar transistors LCSH:Integrated circuits -- Very large scale integration 全ての件名で検索
分　類	LCC:TK7871.99.M44 DC22:621.39/5
書誌ID	1001664827
ISBN	9780521832946
NCID	BA9117798X
巻冊次	: hbk ; ISBN:9780521832946
登録日	2018.10.25
更新日	2018.10.25