<図書>
Terrestrial neutron-induced soft errors in advanced memory devices
責任表示 | Takashi Nakamura ...[et al.] |
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データ種別 | 図書 |
出版情報 | New Jersey : World Scientific , c2008 |
本文言語 | 英語 |
大きさ | xxii, 343 p. : ill.(some col.) ; 24 cm |
概要 | Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily ...rucial for the design and quality assurance of semiconductor memory devices.続きを見る |
目次 | Introduction Terrestrial neutron spectrometry and dosimetry Irradiation testing in the terrestrial field Neutron irradiation test facilities Review and discussion of experimental data Monte Carlo simulation methods Simulation results and their implications International standardization of the neutron test method Summary and challenges. |
所蔵情報
状態 | 巻次 | 所蔵場所 | 請求記号 | 刷年 | 文庫名称 | 資料番号 | コメント | 予約・取寄 | 複写申込 | 自動書庫 |
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理系図2F 開架 | 548.23/N 37 | 2008 |
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031212015502192 |
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筑紫図 1D 450-599 | 548.23/N 37 | 2008 |
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060212013001293 |
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総理工 研究室 | 548.23/N 37 | 2008 |
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062212008000031 |
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書誌詳細
一般注記 | Includes bibliographical references and index |
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著者標目 | Nakamura, Takashi Baba, Mamoru Ibe, Eishi Yahagi, Yasuo Kameyama, Hideaki |
書誌ID | 1001334966 |
ISBN | 9789812778819 |
NCID | BA86525894 |
巻冊次 | ISBN:9789812778819 |
登録日 | 2009.09.18 |
更新日 | 2009.09.18 |