Silicon heterostructure handbook : materials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy

＜図書＞
Silicon heterostructure handbook : materials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy

責任表示	edited by John D. Cressler
データ種別	図書
出版情報	Boca Raton, FL : CRC Taylor & Francis , 2006
本文言語	英語
大きさ	xix, 1227 p. : ill. ; 26 cm
概要	Appropriate for practicing engineers and graduate students, this dense collection details the many advances in using silicon germanium (SiGe) and silicon strained-layer epitaxy to practice bandgap eng...neering of semiconductor devices. The 75 contributions are divided into eight sections on epitaxial growth techniques, SiGe heterojunction bipolar transistor (HBT) operation, BiCMOS technology, heterostructure field-effect transistors, optoelectronic components, measurement and modeling, and circuits. Topics include ultrahigh vacuum chemical vapor deposition, carbon doping, mixed- signal noise, resonant tunneling devices, quantum cascade emitters, the Mextram compact model, and linearization techniques. Annotation ©2006 Book News, Inc., Portland, OR (booknews.com) 続きを見る

状態	巻次	所蔵場所	請求記号	刷年	文庫名称	資料番号	コメント	予約・取寄	複写申込	自動書庫
		筑紫図 1D 450-599	549.8/C 92	2006		067212008000990		予約・取寄			予約・取寄

一般注記	Includes bibliographical references and index
著者標目	Cressler, John D.
件　名	LCSH:Bipolar transistors -- Handbook, manuals, etc 全ての件名で検索 LCSH:Silicon -- Handbook, manuals, etc 全ての件名で検索
分　類	LCC:TK7871.96.B55 DC22:621.3815/28
書誌ID	1001299995
ISBN	0849335590
NCID	BA76805646
巻冊次	ISBN:0849335590
登録日	2009.09.18
更新日	2009.09.18