<図書>
Molecular beam epitaxy : fundamentals and current status
責任表示 | M.A. Herman, H. Sitter |
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シリーズ | Springer series in materials science ; v. 7 |
データ種別 | 図書 |
版 | 2nd, rev. and updated ed |
出版情報 | Berlin : Springer , 1996 |
本文言語 | 英語 |
大きさ | xiv, 453 p. ; 24 cm |
概要 | Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and...chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this second edition two new fields have been added: crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots, and in-growth control of the MBE crystallization process of strained-layer structures. Out-of-date material has been removed. 続きを見る |
所蔵情報
状態 | 巻次 | 所蔵場所 | 請求記号 | 刷年 | 文庫名称 | 資料番号 | コメント | 予約・取寄 | 複写申込 | 自動書庫 |
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理系図 自動書庫 | 427.57 | 1996 |
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025211996005995 |
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書誌詳細
一般注記 | Includes bibliographical references and index |
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著者標目 | *Herman, Marian A. Sitter, Helmut |
件 名 | LCSH:Molecular beam epitaxy |
分 類 | LCC:QC611.6.M64 DC20:621.3815/2 |
書誌ID | 1001166061 |
ISBN | 3540605940 |
NCID | BA28724306 |
巻冊次 | ISBN:3540605940 |
登録日 | 2009.09.17 |
更新日 | 2009.09.17 |