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<図書>
Plasma sources for thin film deposition and etching

責任表示 edited by Maurice H. Francombe, John L. Vossen
シリーズ Physics of thin films : advances in research and development ; v. 18
データ種別 図書
出版情報 San Diego ; Tokyo : Academic Press , c1994
本文言語 英語
大きさ xii, 328 p. : ill. ; 24 cm
概要 This latest volume of the well-known Physics of Thin Films Series includes four chapters that discuss high-density plasma sources for materials processing, electron cyclotron resonance and its uses, u...balancedmagnetron sputtering, and particle formation in thin film processing plasma. Key Features * Chapter One develops a unified framework from which all "high-efficiency" sources may be viewed and compared; outlines key elements of source design affecting processing results; and highlights areas where additional research and development are needed * Chapter Two reviews and analyzes the main types of electron cyclotron resonance (ECR) plasma sources suitable for ECR PACVD of thin films, mainly ECR sources using magnet coils * Chapter Three examines the benefits and limitations of the new technique, unbalanced magnetron sputtering (UBM), along with the motivation for its development, the basic principles of its operation and commercial applications, and some speculations regarding the future of UBM technology * Chapter Four describes general phenomena observed in connection with particle formation in thin film processing plasmas; discusses particles in PECVD plasmas, sputtering plasmas, and RIE plasmas; presents an overview of the theoretical modeling of various aspects of particles in processing plasmas; examines issues of equipment design affecting particle formation; and concludes with remarks about the implications of this work for the control of process-induced particle contamination. 続きを見る

所蔵情報



総理工 研究室 428 1994
068622195000617

書誌詳細

一般注記 Includes bibliographical references and indexes
著者標目 Francombe, Maurice H.
Vossen, John L.
分 類 NDC8:549.8
書誌ID 1000983941
ISBN 0125330189
NCID BA23592456
巻冊次 ISBN:0125330189
登録日 2009.09.16
更新日 2009.09.16

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