Methods to Horizontally Align Single-Walled Carbon Nanotubes on Amorphous Substrate

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Methods to Horizontally Align Single-Walled Carbon Nanotubes on Amorphous Substrate

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Article
Kyushu Univ. Production Kyushu Univ. Production
Responsibility:
Carlo, M. Orofeo(Graduate School of Engineering Sciences, Kyushu University)
Ago, Hiroki(Institute for Materials Chemistry and Engineering, Kyushu University | Graduate School of Engineering Sciences, Kyushu University)
Yoshihara, Naoki(Graduate School of Engineering Sciences, Kyushu University)

Tsuji, Masaharu(Institute for Materials Chemistry and Engineering, Kyushu University)
吾郷, 浩樹(九州大学大学院総合理学府 | 九州大学先導物質化学研究所)
吉原, 直樹(九州大学大学院総合理学府)
辻, 正治(九州大学先導物質化学研究所 | 九州大学大学院総合理学府)

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Language:
English
Publication info:
Journal of Novel Carbon Resource Sciences. 2, pp. 36-40, 2010-09. Kyushu University G-COE program "Novel Carbon Resource Sciences" secretariat
Version:
Publisher
Abstract:
Synthesis of horizontally-aligned single-walled carbon nanotube on amorphous silicon dioxide is an important goal for direct integration of carbon nanotubes into the current modern nanoelectronics. In this micro review, we will overview the methods done to achieve a horizontally aligned single-walled carbon nanotubes on amorphous SiO2 as well as present our recent works in which we modify the substrate to guide the nanotubes during growth. In addition, we present our nanotube-based field-effect transistor that was created using the aligned nanotubes directly grown on silicon substrate. Read more
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