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| 概要 |
Effects of various substrate pretreatments such as exposure to a H2 plasma, heating in H2 gas, and carburization in a H2/CH4 plasma on diamond nucleation were investigated at pressures of the order of... mTorr. For substrate pretreatments using a plasma, positive substrate biasing resulted in higher nucleation densities than negative substrate biasing. This suggests that low-energy ion bombardment is favored prior to diamond nucleation. Also, the heating in H2 gas greatly increased the nucleation density, probably due to an increase in surface roughness. The highest nucleation density (approximately 1×108㎝-2) was obtained when the substrate was heated at around 1000℃ in H2 gas続きを見る
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Mendeley出力
