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In order to clarify the process of crystal growth in vapor deposited silicon carbide (SiC), the distribution of grain orientation and grain boundary character of a plate cut from just above a substrat...e and a plate cut in parallel to the growth direction was analyzed by Orientation Imaging Microscopy (OIM). The process of crystal growth in vapor deposited SiC is as follows. The nuclei of $\beta$-SiC with random orientation are deposited on a substrate and subsequent crystal growth occurs, $langle 110 \rangle$ direction as a preferred orientation. Crystals with $Sigma 3$, $Sigma 9$, and $Sigma 27$ boundaries are predominantly observed and two of them, when they get in contact, forms random boundaries. The nuclei of $alpha$-SiC are formed at random boundaries and grow to become $alpha$-SiC crystals as large as 2 mm.続きを見る
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Mendeley出力
