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Diamond thin films were grown on diamond (100) substrates in an oxygen atmosphere by pulsed laser deposition (PLD) using an ArF excimer laser. The optimum oxygen atmosphere of $5\times 10^{-1}$ Torr c...an etch the ${\rm sp}^2$ bonding fractions preferentially. At a substrate temperature less than 400$^circ$C, amorphous carbon thin films, which showed typical G and D peaks in Raman spectrum, were grown. At the range between 450$^circ$C and 650$^circ$C, single phase diamond films consisting of diamond crystal with 1$sim$2$mu$m diameters were grown. The results demonstrated that the oxygen pressure and the substrate temperature are determinant parameters in the growth of diamond by PLD.続きを見る
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