Mendeley出力
＜図書＞
The confirmation of the surface effect upon phosphorus diffusion into silicon (Japanese journal of applied physics, vol.13 no.11)
| 責任表示 | Masayuki Yoshida |
|---|---|
| データ種別 | 図書 |
| 出版者 | Tokyo |
| 本文言語 | 英語 |
| 目次 | Chemical potential of impurity-vacancy pairs in solids (Japanese journal of applied physics, vol.15 no.11) On dislocation jogs as sources and sinks of vacancies (The philosophical magazine, vol.31 no.1) Excess vacancy generation by E-center dissociation in the case of phosphorus diffusion in silicon (Journal of applied physics, vol.48 no.6) |
所蔵情報
| 状態 | 巻次 | 所蔵場所 | 請求記号 | 刷年 | 文庫名称 | 資料番号 | コメント | 予約・取寄 | 複写申込 | 自動書庫 |
|---|---|---|---|---|---|---|---|---|---|---|
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芸工図 3F 閲覧室 | 教員寄贈著作物 | AAA611/ヨシダマ/14 | 1974 |
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072031281015666 |
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書誌詳細
| 内容注記 | Chemical potential of impurity-vacancy pairs in solids (Japanese journal of applied physics, vol.15 no.11) On dislocation jogs as sources and sinks of vacancies (The philosophical magazine, vol.31 no.1) Excess vacancy generation by E-center dissociation in the case of phosphorus diffusion in silicon (Journal of applied physics, vol.48 no.6) |
|---|---|
| 著者標目 | 吉田, 正幸 <ヨシダ、 マサユキ> |
| 書誌ID | 1000004839 |
| NCID | LB21866073 |
| 登録日 | 1995.03.01 |
| 更新日 | 2005.10.03 |