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Solid-phase growth of [a-Si/a-Fe_<0.4>Si_<0.5>Ge_<0.1>]_n stacked-structures has been investigated. [a-Si/a-Fe_<0.4>Si_<0.5>Ge_<0.1>]_n/c-Si (n =1, 2, 4) samples were annealed at 700-900°C for 30 min ...in a vacuum. The grown layers were analyzed by using Auger electron spectroscopy, the X-ray diffraction, Raman spectroscopy, and the transmission electron microscopy. After annealing at 700°C, β-FeSi_2(Ge) strained by 0.4-0.5% was successfully formed for the sample with n=1. The strains became small with increasing n, i.e., with thinning layer. In addition, superstructures consisting of β-FeSi_2 and c-Si_<0.7>Ge_<0.3> nanocrystals were obtained by Ge segregation after annealing at 800°C. These new structures are useful for fabrication of opto-electrical devices.show more
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